| 2024-06 |
Strain behavior and dopant activation of heavily in-situ B-doped SiGe epitaxial films treated by nanosecond laser annealing |
Materials Science in Semiconductor Processing
|
| 2024-06 |
Evaluation of the chemical states and electrical activation of ultra-highly B-doped Si1-xGex by ion implantation and subsequent nanosecond laser annealing |
Applied Surface Science
|
| 2024-05 |
Properties of low-resistivity molybdenum metal thin film deposited by atomic layer deposition using MoO2Cl2 as precursor |
Journal of Vacuum Science and Technology A
|
| 2024-04 |
Characteristics of high-order silane based Si and SiGe epitaxial growth under 600 ℃ |
Journal of Crystal Growth
|
| 2024-01 |
Synthesis of highly conformal titanium nitride films via tert-butyl chloride-assisted atomic layer deposition |
Applied Surface Science
|
| 2023-06 |
Study on temperature-dependent growth characteristics of germanium oxide film by plasma-enhanced atomic layer deposition |
Thin Solid Films
|
| 2023-04 |
Super-conformal TiN thin film deposition by carrier pulse purge atomic layer deposition system: Chamber design optimization with computational fluid dynamics |
Thin Solid Films
|
| 2022-12 |
Low-Temperature Epitaxial Growth by Quiescent Plasma-Enhanced Chemical Vapor Deposition at Atmospheric Pressure |
ECS Journal of Solid State Science and Technology
|
| 2022-12 |
Morphology Transition of Te-doped InAs Nanowire on InP(111)B Grown Using MOCVD Method |
Crystals
|
| 2022-10 |
Selective Etching of Si versus Si1−xGex in Tetramethyl Ammonium Hydroxide Solutions with Surfactant |
Materials
|
| 2022-08 |
Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs with Regrown In0.53Ga0.47As Contacts |
Electronics (Basel)
|
| 2022-04 |
Quantitative analysis of effect of dopant interaction on microstructural, physical, and electrical properties in laser-annealed SiGe:B:Ga film |
Thin Solid Films
|
| 2021-06 |
Effect of Ge Concentration on the On-Current Boosting of Logic P-Type MOSFET with Sigma-Shaped Source/Drain |
Coatings
|
| 2021-05 |
Epitaxial Growth of Si and SiGe Using High-Order Silanes without a Carrier Gas at Low Temperatures via UHVCVD and LPCVD |
Coatings
|
| 2021-04 |
Comparison of high-order silanes and island formation phenomena during SiGe epitaxy at 500 degrees C |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
|
| 2021-03 |
Theoretical and experimental analysis of the source resistance components in In0.7Ga0.3As quantum-well high-electron-mobility transistors |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
|
| 2021-02 |
Method for contact resistivity measurements on highly phosphorus-doped silicon using a multiline transmission line model |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
|
| 2021-02 |
High performance InGaAs channel MOSFETs on highly resistive InAlAs buffer layers |
SOLID-STATE ELECTRONICS
|
| 2021-02 |
Defect reduction and dopant activation of in situ phosphorus-doped silicon on a (111) silicon substrate using nanosecond laser annealing |
APPLIED PHYSICS EXPRESS
|
| 2021-01 |
Vertical growth characterization of InAs nanowires grown by selective area growth on patterned InP(1 1 1)B substrate by a MOCVD method |
SOLID-STATE ELECTRONICS
|
| 2020-12 |
Effect of N-type doping and vacancy formation on the thermodynamic, electrical, structural, and bonding properties of Si: X. (X = P, As, and Sb): a theoretical study |
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
|
| 2020-11 |
Improvement of contact resistivity of titanium silicide on P-doped epitaxial Si using a Se interlayer |
APPLIED PHYSICS EXPRESS
|
| 2020-11 |
Improvement of contact resistivity of titanium silicide on P-doped epitaxial Si using a Se interlayer |
APPLIED PHYSICS EXPRESS
|
| 2020-10 |
Study of Multi-twin Defects Generated in GaAs and InP Films on Nanopatterned Si via Transmission Electron Microscopy |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
|
| 2020-09 |
Effects of dopant concentration on microstructure and strain states of in-situ phosphorus-doped epitaxial silicon films during dry oxidation |
THIN SOLID FILMS
|
| 2020-09 |
Selective chemical wet etching of Si1-xGex versus Si in single-layer and multi-layer with HNO3/HF mixtures |
THIN SOLID FILMS
|
| 2020-08 |
Quasicrystalline phase-change memory |
SCIENTIFIC REPORTS
|
| 2020-08 |
Quasicrystalline phase-change memory |
SCIENTIFIC REPORTS
|
| 2020-08 |
Epitaxial growth of a silicon capping layer to mitigate roughness after the selective chemical etching of Si1-xGex |
THIN SOLID FILMS
|
| 2020-06 |
NF3 / H2O 원거리 플라즈마 건식 세정에 의한 SiGe 표면 특성 변화 |
반도체디스플레이기술학회지
|
| 2020-06 |
Structural, bonding, and elastic properties of Si:X (X = B, Al, and Ga): a theoretical study |
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
|
| 2020-06 |
Defect Generation Mechanism of Epitaxially Grown In Situ Phosphorus-Doped Silicon on Silicon (111) Substrate |
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
|
| 2020-06 |
Comparison of Strain Characteristics and Contact Resistances of Heavily Phosphorus-Doped Si Formed by Phosphorus Implantation and In Situ Phosphorus-Doped Si Epitaxial Growth |
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
|
| 2020-06 |
Dopant Activation of In Situ Phosphorus-Doped Silicon Using Multi-Pulse Nanosecond Laser Annealing |
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
|
| 2020-05 |
Quantification of point and line defects in Si0.6Ge0.4 alloys with thickness variation via optical pump-THz probe measurement |
APPLIED SURFACE SCIENCE
|
| 2020-04 |
Recrystallization and activation of ultra-high-dose phosphorus-implanted silicon using multi-pulse nanosecond laser annealing |
JAPANESE JOURNAL OF APPLIED PHYSICS
|
| 2020-02 |
Vertical InGaAs tunnel-field-effect transistors by an electro-plating fin formation technique |
SOLID-STATE ELECTRONICS
|
| 2020-02 |
Facet evolution of selectively grown epitaxial Si1-xGex fin layers in sub-100 nm trench arrays |
JOURNAL OF CRYSTAL GROWTH
|
| 2020-02 |
Demonstration of Solar Cell on a Graphite Sheet with Carbon Diffusion Barrier Evaluation |
MOLECULES
|
| 2020-02 |
Chemical bonding states and dopant redistribution of heavily phosphorus-doped epitaxial silicon films: Effects of millisecond laser annealing and doping concentration |
APPLIED SURFACE SCIENCE
|
| 2019-12 |
Phase-change characteristics of carbon-doped GeSbSe thin films for PRAM applications |
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
|
| 2019-07 |
Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits |
NANOSCALE
|
| 2019-06 |
Long-channel InAlAs/InGaAs/InAlAs single-quantum-well MISFETs with subthreshold swing of 61 mV/decade and effective mobility of 11 900 cm2 V−1 centerdot s−1 |
APPLIED PHYSICS EXPRESS
|
| 2019-06 |
Effect of thermal annealing on the strain and microstructures of in-situ phosphorus-doped Si 1−x C x films grown on blanket and patterned silicon wafers |
JOURNAL OF ALLOYS AND COMPOUNDS
|
| 2019-05 |
Effect of P Concentration on Ti Silicide Formation in In-Situ P Doped Epitaxial Si Films |
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
|
| 2019-03 |
Effects of Phosphorus Doping and Postgrowth Laser Annealing on the Structural, Electrical, and Chemical Properties of Phosphorus-Doped Silicon Films |
ACS Applied Electronic Materials
|
| 2019-03 |
Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method |
AIP ADVANCES
|
| 2019-03 |
Analysis of anisotropic in-plane strain behavior in condensed Si1-xGex fin epitaxial layer using X-ray reciprocal space mapping |
JAPANESE JOURNAL OF APPLIED PHYSICS
|
| 2019-03 |
Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition |
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
|
| 2018-08 |
Plasma-enhanced atomic layer deposition of low temperature silicon dioxide films using di-isopropylaminosilane as a precursor |
THIN SOLID FILMS
|
| 2018-06 |
Chemical state analysis of heavily phosphorus-doped epitaxial silicon films grown on Si (1 0 0) by X-ray photoelectron spectroscopy |
APPLIED SURFACE SCIENCE
|
| 2018-05 |
Physical and electrical characteristics of GexSb100-x films for use as phase-change materials |
THIN SOLID FILMS
|
| 2018-03 |
Effect of selenium doping on the crystallization behaviors of GeSb for phase-change memory applications |
THIN SOLID FILMS
|
| 2017-12 |
Two dimensional radial gas flows in atmospheric pressure plasma-enhanced chemical vapor deposition |
AIP ADVANCES
|
| 2017-11 |
Characterization of strain relaxation behavior in Si1-x Ge (x) epitaxial layers by dry oxidation |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
|
| 2017-10 |
Probing lattice vibration and strain states in highly phosphorus-doped epitaxial Si films |
JOURNAL OF MATERIALS CHEMISTRY C
|
| 2017-09 |
Formation of a Ge-rich Si1-xGex (x > 0.9) fin epitaxial layer condensed by dry oxidation |
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
|
| 2017-08 |
Epitaxy of Si1-xCx via ultrahigh-vacuum chemical vapor deposition using Si2H6, Si3H8, or Si4H10 as Si precursors |
JAPANESE JOURNAL OF APPLIED PHYSICS
|
| 2017-07 |
Se-doped Ge10Sb90 for highly reliable phase-change memory with low operation power |
JOURNAL OF MATERIALS RESEARCH
|
| 2017-07 |
Scalable CGeSbTe-based phase change memory devices employing U-Shaped cells |
THIN SOLID FILMS
|
| 2017-07 |
Influence of Si precursor type on the surface roughening of SiGe epitaxial layers deposited by ultrahigh vacuum chemical vapor deposition method |
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
|
| 2017-06 |
Comparison of the optimum number of quantum wells in GaN-based blue light-emitting diodes grown on sapphire and Si(111) substrates |
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
|
| 2017-05 |
Electrical activation of phosphorus in highly P-doped epitaxial silicon thin films |
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
|
| 2017-05 |
Selective epitaxial growth of GaAs on a Si (001) surface formed by an in situ bake in a metal-organic chemical vapor deposition reactor |
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
|
| 2017-04 |
Selective epitaxial growth properties and strain characterization of Si<inf>1−x</inf>Ge<inf>x</inf> in SiO<inf>2</inf> trench arrays |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
|
| 2016-10 |
Use of NH3 etchant for voids suppression to enhance set cycles in CGeSbTe-based phase change memory devices |
THIN SOLID FILMS
|
| 2016-09 |
Selective epitaxial growth of stepwise SiGe:B at the recessed sources and drains: A growth kinetics and strain distribution study |
AIP ADVANCES
|
| 2016-08 |
Phase change memory employing a Ti diffusion barrier for reducing reset current |
THIN SOLID FILMS
|
| 2016-08 |
Microstructural properties of Ni-silicide films formed on epitaxially grown strained Si:P layer |
MICROELECTRONIC ENGINEERING
|
| 2016-06 |
Process to Form V-Grooved Trenches on Patterned Si (001) Substrates Using In Situ Selective Area Etching in a MOCVD Reactor |
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
|
| 2016-05 |
Post-cleaning effect on a HfO2 gate stack using a NF3/NH3 plasma |
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
|
| 2016-05 |
Two-Step Growth of Epitaxial InP Layers by Metal Organic Chemical Vapor Deposition |
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
|
| 2016-03 |
Effect of (HfO2)(X)(Al2O3)(1-X)/SiO2 double-layered blocking oxide on program and erase speed in charge trapping memory devices |
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
|
| 2016-02 |
A Study of Piezoelectric Field Related Strain Difference in GaN-Based Blue Light-Emitting Diodes Grown on Silicon(111) and Sapphire Substrates |
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
|
| 2016-02 |
Enhancement of a cyclic endurance of phase change memory by application of a high-density C15(Ge21Sb36Te43) film |
AIP ADVANCES
|
| 2015-10 |
Relationship between Threading Dislocations and the Optical Properties in GaN-based LEDs on Si Substrates |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
|
| 2015-10 |
Filament Geometry Induced Bipolar, Complementary, and Unipolar Resistive Switching under the Same Set Current Compliance in Pt/SiOx/TiN |
SCIENTIFIC REPORTS
|
| 2015-09 |
Crystallinity of silicon films grown on carbon fibers by very high frequency plasma enhanced chemical vapor deposition |
THIN SOLID FILMS
|
| 2015-08 |
Improvement of reliability and speed of phase change memory devices with N7.9(Ge46.9Bi7.2Te45.9) films |
AIP ADVANCES
|
| 2015-07 |
Comparison of Strain in GaN-Based Blue Light-Emitting Diode Grown on Silicon(111) and Sapphire Substrates |
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
|
| 2015-04 |
Characterization of residual strain in epitaxial Ge layers grown in sub-100 nm width SiO2 trench arrays |
THIN SOLID FILMS
|
| 2015-03 |
Reduction of RESET current in phase change memory devices by carbon doping in GeSbTe films |
JOURNAL OF APPLIED PHYSICS
|
| 2014-10 |
In-Situ P Doped Epitaxial Si1-xCx Growth Under UHV-CVD |
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
|
| 2014-10 |
Size and Shape Effect of SiC Source/Drain on Strained Si |
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
|
| 2014-09 |
Defect analyses of selective epitaxial grown GaAs on STI patterned (001) Si substrates |
JOURNAL OF CRYSTAL GROWTH
|
| 2014-09 |
Strain evolution during the growth of epitaxial Ge layers between narrow oxide trenches |
JOURNAL OF CRYSTAL GROWTH
|
| 2014-08 |
Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction |
APPLIED PHYSICS LETTERS
|
| 2014-05 |
RESET-first unipolar resistance switching behavior in annealed Nb2O5 films |
THIN SOLID FILMS
|
| 2014-05 |
Growth and electrical properties of in situ phosphorus-doped polycrystalline silicon films using Si3H8 and PH3 |
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
|
| 2014-04 |
Selective epitaxial growth of compressively strained Ge layers on Si in 40-nm trench arrays |
THIN SOLID FILMS
|
| 2014-03 |
Effects of nitrogen incorporation in HfO2 grown on InP by atomic layer deposition: An evolution in structural, chemical, and electrical characteristics |
ACS APPLIED MATERIALS & INTERFACES
|
| 2014-03 |
Structural deformation and void formation driven by phase transformation in the Ge2Sb2Te5 film |
JOURNAL OF MATERIALS CHEMISTRY C
|
| 2013-12 |
RESET-first bipolar resistive switching due to redox reaction in ALD HfO2 films |
Microelectronic Engineering
|
| 2013-11 |
Interfacial reaction induced strain relaxation in Hf-silicate film on strained Si0.7Ge0.3 (001) as a function of annealing temperature |
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
|
| 2013-11 |
Synthesis of self-ordered Sb2Te2 films with atomically aligned Te layers and the effect of phonon scattering modulation |
JOURNAL OF MATERIALS CHEMISTRY C
|
| 2013-11 |
Strain behavior of epitaxial Si1-xCx films on silicon substrates during dry oxidation |
THIN SOLID FILMS
|
| 2013-11 |
Effect of thermal annealing on resistance switching characteristics of Pt/ZrO2/TiN stacks |
MATERIALS CHEMISTRY AND PHYSICS
|
| 2013-10 |
Control of the interfacial reaction in HfO2 on Si-passivated GaAs |
APPLIED SURFACE SCIENCE
|