| 2013-08 |
Change in crystalline structure and band alignment in atomic-layer-deposited HfO2 on InP using an annealing treatment |
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
|
| 2013-06 |
Channel Strain Measurement of Si1-xCx Structures: Effects of Gate Length, Source/Drain Length, and Source/Drain Elevation |
APPLIED PHYSICS EXPRESS
|
| 2013-05 |
Effect of chemical bonding states in TaO x base layers on rectifying bipolar resistive switching characteristics |
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
|
| 2012-10 |
Characteristics of phase transition and separation in a In-Ge-Sb-Te system |
APPLIED SURFACE SCIENCE
|
| 2012-09 |
High mobility CMOS transistors on Si/SiGe heterostructure channels |
Microelectronic Engineering
|
| 2012-07 |
The oxides growth during high-temperature oxidation of Si 1-x Gex nanowires |
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
|
| 2012-06 |
Effect of amorphization on the structural stability and reversibility of Ge2Sb2Te5 and oxygen incorporated Ge2Sb2Te5 films |
JOURNAL OF MATERIALS CHEMISTRY
|
| 2012-05 |
Change of Resistive-switching in TiO2 Films with Additional HfO2 Thin Layer |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
|
| 2012-04 |
Ge Oxidation in the Remaining Cores of Si1-xGex Nanowires After Prolonged Oxidation |
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
|
| 2012-01 |
Interfacial Reactions between HfO2 Films Prepared by Atomic-Layer-Deposition and an InP Substrate Using Postnitridation with NH3 Vapor |
ELECTROCHEMICAL AND SOLID STATE LETTERS
|
| 2011-09 |
Reproducible resistance switching of defect-engineered NiOx with metallic Nb impurity |
THIN SOLID FILMS
|
| 2011-09 |
Characterization of channel strain evolution upon the silicidation of recessed source/drain Si(1-x)Ge(x) structures |
APPLIED PHYSICS LETTERS
|
| 2011-07 |
Enhanced Electrical Properties of SrTiO(3) Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition |
ELECTROCHEMICAL AND SOLID STATE LETTERS
|
| 2011-06 |
Defect states in epitaxial HfO2 films induced by atomic transport from n-GaAs (100) substrate |
JOURNAL OF APPLIED PHYSICS
|
| 2011-05 |
Effect of Incorporated Nitrogen on the Band Alignment of Ultrathin Silicon-oxynitride Films as a Function of the Plasma Nitridation Conditions |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
|
| 2011-04 |
Control of the Workfunction in Bilayer Metal Gate Stacks by Varying the First Layer Thickness |
ELECTROCHEMICAL AND SOLID STATE LETTERS
|
| 2011-04 |
Achievement of a high channel strain via dry oxidation of recessed source/drain Si1-xGex structures |
APPLIED PHYSICS LETTERS
|
| 2011-04 |
Effects of Nitrogen on Endurance of N-doped Ge2Sb2Te5 Films During Laser-Induced Reversible Switching |
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
| 2011-04 |
Comparison of the Crystallization Behaviors in As-Deposited and Melt-Quenched N-Doped Ge2Sb2Te5 Thin Films |
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
| 2011-03 |
Effect of W impurity on resistance switching characteristics of NiOx films |
Current Applied Physics
|
| 2011-03 |
The Phase Change Effect of Oxygen-Incorporation in GeSbTe Films |
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
| 2011-03 |
Enhanced bipolar resistive switching of HfO2 with a Ti interlayer |
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
|
| 2011-02 |
Effects of Interface Al2O3 Passivation Layer for High-k HfO2 on GaAs |
ELECTROCHEMICAL AND SOLID STATE LETTERS
|
| 2010-12 |
Understanding the epitaxial growth of SexTey@Te core-shell nanorods and the generation of periodic defects |
ACS Nano
|
| 2010-12 |
Growth of amorphous silicon oxide nanowires in the absence of a Si precursor through a solid state transformation |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
|
| 2010-11 |
Effect of Al doping on resistive switching behavior of NiOx films for nonvolatile memory application |
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
|
| 2010-11 |
Relaxation of misfit strain in silicon-germanium (Si1-xGe x) films during dry oxidation |
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
|
| 2010-10 |
Effect of Bonding Characteristics on the Instability of GexSb1-x Films |
Journal of The Electrochemical Society
|
| 2010-06 |
Enhancement of Thermal Stability in Ni Silicides on Epi-Si1-xCx by Pt Addition |
Journal of The Electrochemical Society
|
| 2010-06 |
TEM Study on Volume Changes and Void Formation in Ge2Sb2Te5 Films, with Repeated Phase Changes |
ELECTROCHEMICAL AND SOLID STATE LETTERS
|
| 2010-06 |
The Effects of Postannealing Treatment in Forming Gas on Low-k SiOC(H) Film |
Journal of The Electrochemical Society
|
| 2010-04 |
Improved thermal stability of Al2O3 /HfO2/Al2O3 high-k gate dielectric stack on GaAs |
Applied Physics Letters
|
| 2010-03 |
Agglomeration of Cylindrically Condensed Cores in Si1-xGex Nanowires by Oxidation |
ELECTROCHEMICAL AND SOLID STATE LETTERS
|
| 2010-03 |
Effect of Doped Nitrogen on the Crystallization Behaviors of Ge2Sb2Te5 |
Journal of The Electrochemical Society
|
| 2010-02 |
Effect of In incorporated into SbTe on phase change characteristics resulting from changes in electronic structure |
Applied Physics Letters
|
| 2010-02 |
Behavior of Strain at a Thin Ge Pile-up Layer Formed by Dry Oxidation of a Si0.7Ge0.3 Film |
Thin Solid Films
|
| 2010-01 |
Changes in Gd2O3 films grown on Si(100) as a function of nitridation temperature and Zr incorporation |
Thin Solid Films
|
| 2010-01 |
Crystallization Behaviors of Laser induced Ge2Sb2Te5 in Different Amorphous State |
Journal of The Electrochemical Society
|
| 2009-10 |
Oxidation characteristics of Si0.85Ge0.15 nanowires |
Materials Science In Semiconductor Processing
|
| 2009-09 |
Electronic Structure of Te/Sb/Ge and Sb/Te/Ge Multi Layer Films Using Photoelectron Spectroscopy |
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
|
| 2009-08 |
The Effect of NH3 on the Interface of HfO2 and Al2O3 Films on GaAs(100) Surfaces |
Electrochemical And Solid State Letters
|
| 2009-07 |
Phase change behavior in oxygen-incorporated Ge2Sb2Te5 films |
Applied Physics Letters
|
| 2009-06 |
Changes in the structure of an atomic-layer-deposited HfO2 film on a GaAs (100) substrate as a function of postannealing temperature |
Applied Physics Letters
|
| 2009-05 |
Electronic and structural characteristics of Zr-incorporated Gd2O3 films on strained SiGe substrates |
Journal of Chemical Physics
|
| 2009-02 |
Study of Hafnium Silicate Treated with NO Gas Annealing |
Journal Of The Korean Physical Society
|
| 2008-12 |
Thermal stability of Ni-Pt-Ta alloy silicides on epi-Si1-xCx |
Materials Science And Engineering B-Advanced Functional Solid-State Materials
|
| 2008-11 |
Interfacial reaction of atomic-layer-deposited HfO2 film as a function of the surface state of an n-GaAs (100) substrate |
Applied Physics Letters
|
| 2008-07 |
Change in the interfacial reaction of Hf-silicate film as a function of thickness and stoichiometry |
Journal of Chemical Physics
|
| 2008-02 |
Strain behaviors of Si1-xGex grown on oxidized and etched Si1-xGex |
Electrochemical and Solid State Letters
|
| 2008-02 |
Investigation of phase transition of Ge2Sb2Te5 and N-incorporated Ge2Sb2Te5 films using x-ray absorption spectroscopy |
Applied Physics Letters
|
| 2008-01 |
Change in band alignment of Hf O2 films with annealing treatments |
Applied Physics Letters
|
| 2008-01 |
Effects of postnitridation annealing on band gap and band offsets of nitrided Hf-silicate films |
Applied Physics Letters
|
| 2007-10 |
Phase transformation behavior of N-doped Ge2 Sb2+x Te5 thin films (x=0, 0.2) for phase change memory |
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
| 2007-07 |
Effects of Annealing Temperature on the Electrical Properties of ALD-Grown Hf-Silicate Films Having Various Si Contents |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
|
| 2007-07 |
비 Si 기판을 이용한 차세대 반도체 소자 기술의 특징 및 발전 방향 |
전자공학회지
|
| 2007-06 |
The dielectric characteristics and thermal stability of Hf-silicate films with different Si contents |
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
| 2007-01 |
A study on the thermal stabilities of the NiGe and Ni1-xTaxGe systems |
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
| 2007-01 |
In-situ annealing study on the thermal stability of nickel germanides |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
|
| 2007-01 |
Growth kinetics of atomic layer deposited Hf silicate-like films using Hf[N (CH3) (C |
ELECTROCHEMICAL AND SOLID STATE LETTERS
|
| 2006-10 |
Change in phase separation and electronic structure of nitrided Hf-silicate films as a function of composition and post-nitridation anneal |
APPLIED PHYSICS LETTERS
|
| 2006-10 |
Effects of N-2(+) ion implantation on phase transition in Ge2Sb2Te5 films |
JOURNAL OF APPLIED PHYSICS
|
| 2006-07 |
Formation of a Ge-rich layer during the oxidation of strained Si1-xGex |
JOURNAL OF APPLIED PHYSICS
|
| 2006-05 |
Phase separation of a Ge2Sb2Te5 alloy in the transition from an amorphous structure to crystalline structures |
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
|
| 2006-05 |
Nitridation for HfO2 high-k films on Si by an NH3 annealing treatment |
APPLIED PHYSICS LETTERS
|
| 2006-04 |
Physical and electrical characteristics of atomic-layer-deposited Hf-silicate thin films using Hf[N(CH3)(C2H5)](4) and SiH[N(CH3)(2)](3) precursors |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
|
| 2006-03 |
Structural and stoichiometric change in nitrided HfO2 grown on Ge(100) by atomic layer deposition |
APPLIED PHYSICS LETTERS
|
| 2006-03 |
Change in depth profile of N highly incorporated into SiO2 by plasma-assisted nitridation |
ELECTROCHEMICAL AND SOLID STATE LETTERS
|
| 2006-02 |
Suppression of phase separation in Hf-silicate films using NH3 annealing treatment |
APPLIED PHYSICS LETTERS
|
| 2006-01 |
A study on the formation processes and microstructures of Ni germanosilicide films on Si |
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
| 2005-12 |
Phase separation and electronic structure of Hf-silicate film as a function of composition |
APPLIED PHYSICS LETTERS
|
| 2005-12 |
Characteristics of HfO2-Al2O3 laminate films containing incorporated N as a function of stack structure and annealing temperature |
APPLIED PHYSICS LETTERS
|
| 2005-08 |
Hf-aluminate films with and without an interfacial layer during growth and postannealing - Structural and electrical characteristics |
ELECTROCHEMICAL AND SOLID STATE LETTERS
|
| 2005-07 |
Effect of ZrO2 incorporation into high dielectric Gd2O3 film grown on Si(111) |
JOURNAL OF APPLIED PHYSICS
|
| 2005-01 |
Formation of GdSi2 film on Si(111) via phase transformation assisted by interfacial SiO2 layer |
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
|
| 2005-01 |
Thermal stability of Al- and Zr-doped HfO |
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
|
| 2004-11 |
Interfacial reaction depending on the stack structure of Al2O3 and HfO2 during film growth and postannealing |
APPLIED PHYSICS LETTERS
|
| 2004-06 |
Interfacial characteristics of N-incorporated HfAlO high-k thin films |
APPLIED PHYSICS LETTERS
|
| 2004-05 |
The microstructure and chemical state of W-Si-N layers formed in W/WNx/poly-Si systems during postannealing |
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
| 2004-05 |
Evolution of tungsten-oxide whiskers synthesized by a rapid thermal-annealing treatment |
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
|
| 2004-05 |
Investigation of Ge profile on SiGe islands by scanning photoelectron microscopy |
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
|
| 2004-02 |
Interfacial characteristics of HfO2 films grown on strained Si0.7Ge0.3 by atomic-layer deposition |
APPLIED PHYSICS LETTERS
|
| 2004-01 |
Change in the chemical state and thermal stability of HfO2 by the incorporation of Al2O3 |
APPLIED PHYSICS LETTERS
|
| 2004-01 |
Physical and electrical properties of W/MN |
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
| 2004-01 |
Investigation of the chemical state of ultrathin Hf-Al-O films during high temperature annealing |
SURFACE SCIENCE
|
| 2003-12 |
Interfacial reactions between WNx and poly Si1-xGex films |
JOURNAL OF APPLIED PHYSICS
|
| 2003-11 |
Characteristice of ZrO2 Films with Al and Pt Gate Electrodes |
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
| 2003-09 |
Evaluation of the electrical properties and interfacial reactions for the polycrystalline Si1-xGex(x=0,0.6)/HfO2 gate stack |
APPLIED PHYSICS LETTERS
|
| 2003-03 |
Properties of polycrystalline Si1-xGex films grown by ultrahigh vacuum CVD using Si2H6 and GeH4 |
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|